Performance Enhancement of PbS‐TBAI Quantum Dot Solar Cell with MoTe₂ as Hole Transport Layer

Novel solar power technologies are constantly evolving and improving, this is seen as a potential way to meet the increasing demand for electricity energy on global scale. Quantum dot cells (QDSCs) one of most optimistic third‐generation cells. Because superior qualities, such its size, tuneable bandgap, high stability, extremely low cost, quantum dots (QDs) have drawn lot attention in photovoltaic applications highly effective Herein, WO 3 utilized electron transport layer (ETL), MoTe 2 hole (HTL), lead sulfate treated with tetrabutylammonium iodide (PbS‐TBAI) QD absorber layer. Overall optimization still represents an obstacle raise efficiency QDSC. Temperature, series–shunt resistance, thickness optimized, further analysis done overall contour plot affinities HTL ETL. For all aspects simulation work, SCAPS‐1D simulator program employed. Fill factor 85.96%, open‐circuit voltage 923.7 mV, short‐circuit density 38.61 mA cm −2 , conversion 30.66% values optimized performance parameters. The improved proposed device can pave fabrication